? 2012 ixys corporation, all rights reserved symbol test conditions maximum ratings v dss t j = 25 c to 150 c 1500 v v dgr t j = 25 c to 150 c, r gs = 1m ? 1500 v v gss continuous 30 v v gsm transient 40 v i d25 t c = 25 c20 a i dm t c = 25 c, pulse width limited by t jm 50 a i a t c = 25 c10 a e as t c = 25 c 2.5 j dv/dt i s i dm , v dd v dss ,t j 150 c 5 v/ns p d t c = 25 c 1250 w t j -55 to +150 c t jm 150 c t stg -55 to +150 c t l 1.6mm (0.062 in.) from case for 10s 300 c t sold plastic body for 10s 260 c m d mounting torque (to-264) 1.13/10 nm/lb.in. f c mounting force (plus247) 20..120 /4.5..27 n/lb. weight to-264 10 g plus247 6 g high voltage power mosfets w/ extended fbsoa IXTK20N150 ixtx20n150 n-channel enhancement mode avalanche rated guaranteed fbsoa v dss = 1500v i d25 = 20a r ds(on) < 1 ? ? ? ? ? ds100424b(11/12) features z avalanche rated z fast intrinsic diode z guaranteed fbsoa at 75 c z low package inductance advantages z easy to mount z space savings applications z high voltage power supplies z capacitor discharge z pulse circuits symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. bv dss v gs = 0v, i d = 1ma 1500 v v gs(th) v ds = v gs , i d = 1ma 2.5 4.5 v i gss v gs = 30v, v ds = 0v 200 na i dss v ds = v dss , v gs = 0v 50 a t j = 125 c 750 a r ds(on) v gs = 10v, i d = 0.5 ? i d25 , note 1 1 ? g = gate d = drain s = source tab = drain plus247 (ixtx) tab g d s to-264 (ixtk) s g d tab
ixys reserves the right to change limits, test conditions, and dimensions. IXTK20N150 ixtx20n150 ixys mosfets and igbts are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 b1 6,683,344 6,727,585 7,005,734 b2 7,157,338b2 by one or more of the following u.s. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 b1 6,534,343 6,710,405 b2 6,759,692 7,063,975 b2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 b1 6,583,505 6,710,463 6,771,478 b2 7,071,537 note: 1. pulse test, t 300 s, duty cycle, d 2%. symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. g fs v ds = 30v, i d = 0.5 ? i d25 , note 1 14 24 s c iss 7800 pf c oss v gs = 0v, v ds = 25v, f = 1mhz 487 pf c rss 163 pf t d(on) 35 ns t r 30 ns t d(off) 80 ns t f 33 ns q g(on) 215 nc q gs v gs = 10v, v ds = 0.5 ? v dss , i d = 0.5 ? i d25 40 nc q gd 93 nc r thjc 0.10 c/w r thcs 0.15 c/w safe operating area specification symbol test conditions characteristic values min. typ. max. soa v ds = 1500v, i d = 133ma, t c = 75 c, tp = 3s 200 w source-drain diode symbol test conditions characteristic values (t j = 25 c unless otherwise specified) min. typ. max. i s v gs = 0v 20 a i sm repetitive, pulse width limited by t jm 80 a v sd i f = i s , v gs = 0v, note 1 1.5 v t rr 1.1 s q rm 1.8 c i rm 32 a resistive switching times v gs = 10v, v ds = 0.5 ? v dss , i d = 0.5 ? i d25 r g = 1 ? (external) to-264 outline plus247 tm outline terminals: 1 - gate 2 - drain 3 - source 4 - drain terminals: 1 - gate 2 - drain 3 - source dim. millimeter inches min. max. min. max. a 4.83 5.21 .190 .205 a 1 2.29 2.54 .090 .100 a 2 1.91 2.16 .075 .085 b 1.14 1.40 .045 .055 b 1 1.91 2.13 .075 .084 b 2 2.92 3.12 .115 .123 c 0.61 0.80 .024 .031 d 20.80 21.34 .819 .840 e 15.75 16.13 .620 .635 e 5.45 bsc .215 bsc l 19.81 20.32 .780 .800 l1 3.81 4.32 .150 .170 q 5.59 6.20 .220 0.244 r 4.32 4.83 .170 .190 millimeter inches min. max. min. max. a 4.82 5.13 .190 .202 a1 2.54 2.89 .100 .114 a2 2.00 2.10 .079 .083 b 1.12 1.42 .044 .056 b1 2.39 2.69 .094 .106 b2 2.90 3.09 .114 .122 c 0.53 0.83 .021 .033 d 25.91 26.16 1.020 1.030 e 19.81 19.96 .780 .786 e 5.46 bsc .215 bsc j 0.00 0.25 .000 .010 k 0.00 0.25 .000 .010 l 20.32 20.83 .800 .820 l1 2.29 2.59 .090 .102 p 3.17 3.66 .125 .144 q 6.07 6.27 .239 .247 q1 8.38 8.69 .330 .342 r 3.81 4.32 .150 .170 r1 1.78 2.29 .070 .090 s 6.04 6.30 .238 .248 t 1.57 1.83 .062 .072 dim. i f = 10a, -di/dt = 100a/ s v r = 100v, v gs = 0v
? 2012 ixys corporation, all rights reserved IXTK20N150 ixtx20n150 fig. 1. output characteristics @ t j = 25oc 0 5 10 15 20 25 30 0 5 10 15 20 25 30 v ds - volts i d - amperes v gs = 10v 6 v 4 v 5 v fig. 2. output characteristics @ t j = 125oc 0 2 4 6 8 10 12 14 16 0 5 10 15 20 25 30 v ds - volts i d - amperes v gs = 10v 6v 4 v 5v fig. 3. r ds(on) normalized to i d = 10a value vs. junction temperature 0.2 0.6 1.0 1.4 1.8 2.2 2.6 3.0 -50 -25 0 25 50 75 100 125 150 t j - degrees centigrade r ds(on) - normalized v gs = 10v i d = 20a i d = 10a fig. 4. r ds(on) normalized to i d = 10a value vs. drain current 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 0 4 8 1216202428 i d - amperes r ds(on) - normalized v gs = 10v t j = 125oc t j = 25oc fig. 6. input admittance 0 4 8 12 16 20 24 28 3.0 3.5 4.0 4.5 5.0 5.5 6.0 v gs - volts i d - amperes t j = 125oc 25oc - 40oc fig. 5. maximum drain current vs. case temperature 0 2 4 6 8 10 12 14 16 18 20 22 -50 -25 0 25 50 75 100 125 150 t c - degrees centigrade i d - amperes
ixys reserves the right to change limits, test conditions, and dimensions. IXTK20N150 ixtx20n150 fig. 7. transconductance 0 5 10 15 20 25 30 35 40 0 5 10 15 20 25 30 i d - amperes g f s - siemens t j = - 40oc 125oc 25oc fig. 8. forward voltage drop of intrinsic diode 0 10 20 30 40 50 60 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 v sd - volts i s - amperes t j = 125oc t j = 25oc fig. 9. gate charge 0 2 4 6 8 10 0 20 40 60 80 100 120 140 160 180 200 220 q g - nanocoulombs v gs - volts v ds = 750v i d = 10a i g = 10ma fig. 10. capacitance 10 100 1,000 10,000 100,000 0 5 10 15 20 25 30 35 40 v ds - volts capacitance - picofarads f = 1 mhz c iss c rss c oss fig. 11. forward-bias safe operating area @ t c = 25oc 0.1 1 10 100 10 100 1,000 10,000 v ds - volts i d - amperes t j = 150oc t c = 25oc single pulse 1ms 100s r ds(on) limit 10ms dc 100ms fig. 12. forward-bias safe operating area @ t c = 75oc 0.1 1 10 100 10 100 1,000 10,000 v ds - volts i d - amperes t j = 150oc t c = 75oc single pulse 1ms 100s r ds(on) limit 10ms dc 100ms 25s
? 2012 ixys corporation, all rights reserved ixys ref: ixt_20n150(9p)12-13-11 IXTK20N150 ixtx20n150 fig. 12. maximum transient thermal impedance 0.001 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 10 pulse width - seconds z (th)jc - oc / w fig. 13. maximum transient thermal impedance aaaaaa 0.3
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